Polycrystalline Bi films were deposited onto p-GaAs͑100͒ by electrochemical deposition. Annealing resulted in the formation of large grains with a preferred ͓012͔ orientation. The p-GaAs/Bi junctions were rectifying and the barrier height and ideality factor decreased with increasing film thickness. For films greater than 0.5 m in thickness, the barrier height was about 0.56 eV and the ideality factor was between 1.1-1.2 for both as-deposited and annealed films. The resistance of the

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... d films exhibited a negative temperature coefficient whereas the annealed films exhibited a positive temperature coefficient due to the limiting carrier mean free path. The magnetoresistance ͑MR͒ exhibited a quasilinear field dependence with an MR effect as large as 5600 ͑560 000%͒ at 5 K and 2.2 ͑220%͒ at room temperature.