Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.
ABSTRACTS High minority carrier lifetimes of a few milliseconds have been demonstrated both on CZ and FZ n-type silicon substrates. It is particularly interesting that the phosphorus doped n-type CZ wafers give minority carrier lifetimes nearly as high as those from the best p-type FZ silicon materials. This gives a good potential for very high performance on n-type CZ substrates. 21.1% and 21.9% efficiencies are reported for PERT (passivated emitter, rear totally-diffused) cells fabricated ondoi:10.1109/pvsc.2002.1190495 fatcat:erejc2rwprhefoy2ckxtz6s3xe