A 28 GHz Static CML Frequency Divider with Back-Gate Tuning on 22-nm CMOS FD-SOI Technology

Mikko Hietanen, Janne Aikio, Rehman Akbar, Timo Rahkonen, Aarno Parssinen
2019 2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)  
A divide-by-2 frequency divider circuit was designed using 22-nm CMOS FD-SOI technology. The circuit utilizes back-gate biasing which provides almost 4GHz additional output center frequency tuning range over other mechanisms leading to 21.3 to 30GHz operation range with 0dBm input signal. This covers 5G bands from 24.25 to 27.5GHz with good margin. Divider dissipates 11mW from 0.86V supply and occupies 800µm 2 of area. Small area allows to place divider-by-2 block next to IQ mixers in a direct conversion or sliding IF transmitter or receiver.
doi:10.1109/sirf.2019.8709088 fatcat:qpaal4brznaifotebrjmjkmv5y