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Embedded Solenoid Inductors for RF CMOS Power Amplifiers
[chapter]
2001
Transducers '01 Eurosensors XV
Preserved Fulltext
The fabrication of a surface micromachined, epoxyembedded, high-Q electroplated inductor, and the simultaneous integration of four of these devices with a foundry-fabricated CMOS RF power amplifier, is described. The embedded nature of these inductors allows conventional handling and packaging of inductor/chip systems without additional consideration for the inductor structure. A 6-turn inductor fabricated on silicon shows a peak Q-factor of 20.5 at 4.5 GHz and an inductance of 2.6nH. To
doi:10.1007/978-3-642-59497-7_257
fatcat:id5avapbffdzrdzhj4u5svk6ni