A STUDY OF A NEW HETEROJUNCTION MADE OF n-TYPE SILICON AND p-TYPE AMORPHOUS SEMICONDUCTOR

Y. Sawan, M. El-Gabaly, F. Wakim, S. Atari
1981 Le Journal de Physique Colloques  
A b s t r a c t . -A p-n h e t e r o j u n c t i o n was p r e p a r e d by d e p o s i t i n g a t h i n f i l m of p-type amorphous As2Se3Cux ( X = 0 . 2 , 0 . 4 and 1 . 0 ) on n-type c r y s t a l l i n e s i l i c o n w a f e r s . The I -V c h a r a c t e r i s t i c s of t h e j u n c t i o n were t y p i c a l of t h o s e of p-n j u n c t i o n s b o t h i n t h e d a r k and under i l l u m i n a t i o n . The p r e l i m i n a r y optimum c h a r a c t e r i s t i c s were o b t a i n
more » ... s were o b t a i n e d w i t h an a n n e a l e d p-type amorphous A S~S~~C U~,~ w i t h an o p t i c a l gap of 1 . 4 3 eV. A maximum open c i r c u i t v o l t a g e (Voc) of 0.37 V and s h o r t c i r c u i t c u r r e n t ( I s c ) 2 2 of 10 mA/cm was observed under s o l a r r a d i a t i o n of 800 w/m .
doi:10.1051/jphyscol:19814109 fatcat:4q5xlx4jbrbvznaojvoxppirqy