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2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)
In this work, we have fabricated the first transparent gate using sputtered ITO/Au/ITO composite films InAlAs/InGaAs metamorphic HEMT (CTG-MHEMT) on GaAs substrate. The CTG-MHEMT has been demonstrated to increase front side optical coupling efficiency as an optoelectronic mixer. By optimizing the bias condition, the optoelectronic mixing efficiency can be enhanced. The photodetection mechanism of CTG-MHEMT is clarified by investigating the internal photovoltaic gain (G pv ) and photoconductancedoi:10.1109/iciprm.2010.5516402 fatcat:e2mxt63w4nczzm57ifaeebh34y