Reflection properties and defect formation in metallic photonic crystals

E. Ozbay, B. Temelkuran, M. Sigalas, G. Tuttle, C.M. Soukoulis, K.M. Ho
Technical Digest. Summaries of Papers Presented at the International Quantum Electronics Conference. Conference Edition. 1998 Technical Digest Series, Vol.7 (IEEE Cat. No.98CH36236)  
C 400--E .f 500 11.63 11.68 11.73 1 Z h 7 0 11 12 13 14 15 16 Frequency (GHz) QTuJ2 Fig. 2. The measured power ofthe EM field inside a one-dimensional defect structure. QTuJ2 Fig. 3. The measured power of the EM field inside a localized defect structure. crystal structure in the following manner. Part of the rods on the 8th and 9th layers were removed to obtain a rectangular prism like cavity. Figure 3 shows the power enhancement characteristics of this structure. An enhancement factor of 290,
more » ... ent factor of 290, and a Qfactor of 540 were measured at a defect frequency of 12.32 GHz. Our results suggest the possibility of using the embedded detector as an RCE detector. By using a smaller size photonic crystal and a higher-frequency detector, the effect can also be shown at millimeter and farinfrared frequencies. Such RCE detectors will have increased sensitivity and efficiency when compared to conventional detectors, and can be used for various applications where sensitivity and efficiency are important parameters.
doi:10.1109/iqec.1998.680164 fatcat:zu7ko5bcwvcc5dbhimj45rqixi