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Technical Digest. Summaries of Papers Presented at the International Quantum Electronics Conference. Conference Edition. 1998 Technical Digest Series, Vol.7 (IEEE Cat. No.98CH36236)
C 400--E .f 500 11.63 11.68 11.73 1 Z h 7 0 11 12 13 14 15 16 Frequency (GHz) QTuJ2 Fig. 2. The measured power ofthe EM field inside a one-dimensional defect structure. QTuJ2 Fig. 3. The measured power of the EM field inside a localized defect structure. crystal structure in the following manner. Part of the rods on the 8th and 9th layers were removed to obtain a rectangular prism like cavity. Figure 3 shows the power enhancement characteristics of this structure. An enhancement factor of 290,doi:10.1109/iqec.1998.680164 fatcat:zu7ko5bcwvcc5dbhimj45rqixi