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Epitaxial SrBi 2 Ta 2 O 9 (SBT) thin films with welldefined (116) orientation have been grown by pulsed laser deposition on Si(100) substrates covered with an yttriastabilized ZrO 2 (YSZ) buffer layer and an epitaxial layer of electrically conductive SrRuO 3 . Studies on the in-plane crystallographic relations between SrRuO 3 and YSZ revealed a rectangle-on-cube epitaxy with respect to the substrate. X-ray diffraction pole figure measurements revealed welldefined orientation relations, viz. SBTdoi:10.1080/10584580215150 fatcat:4fbsvzfznvdjtdp5gfu54rwqki