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Tuning of structure inversion asymmetry by the δ-doping position in (001)-grown GaAs quantum wells
2009
Applied Physics Letters
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Structure and bulk inversion asymmetry in doped (001)-grown GaAs quantum wells is investigated by applying the magnetic field induced photogalvanic effect. We demonstrate that the structure inversion asymmetry (SIA) can be tailored by variation of the delta-doping layer position. Symmetrically-doped structures exhibit a substantial SIA due to impurity segregation during the growth process. Tuning the SIA by the delta-doping position we grow samples with almost equal degrees of structure and bulk inversion asymmetry.
doi:10.1063/1.3156027
fatcat:e57ulq2zd5bznlsu5vh4vallx4