Tuning of structure inversion asymmetry by the δ-doping position in (001)-grown GaAs quantum wells

V. Lechner, L. E. Golub, P. Olbrich, S. Stachel, D. Schuh, W. Wegscheider, V. V. Bel'kov, S. D. Ganichev
2009 Applied Physics Letters  
Structure and bulk inversion asymmetry in doped (001)-grown GaAs quantum wells is investigated by applying the magnetic field induced photogalvanic effect. We demonstrate that the structure inversion asymmetry (SIA) can be tailored by variation of the delta-doping layer position. Symmetrically-doped structures exhibit a substantial SIA due to impurity segregation during the growth process. Tuning the SIA by the delta-doping position we grow samples with almost equal degrees of structure and bulk inversion asymmetry.
doi:10.1063/1.3156027 fatcat:e57ulq2zd5bznlsu5vh4vallx4