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We investigated the effect of capacitively coupled Ar plasma treatment on contact resistance (R c ) and channel sheet resistance (R sh ) of graphene field effect transistors (FETs), by varying their channel length in the wide range from 200 nm to 50 μm which formed the transfer length method (TLM) patterns. When the Ar plasma treatment was performed on the long channel (10 ~ 50 μm) graphene FETs for 20 s, R c decreased from 2.4 to 1.15 kΩ·μm. It is understood that this improvement in R c isdoi:10.5695/jkise.2016.49.2.152 fatcat:vf4rsmnvtvaw3ijsrqufmu4jq4