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High Contrast Metastructures IV
We present a GaAs-based VCSEL structure, BCB bonded to a Si 3 N 4 waveguide circuit, where one DBR is substituted by a free-standing Si 3 N 4 high-contrast-grating (HCG) reflector realized in the Si 3 N 4 waveguide layer. This design enables solutions for on-chip spectroscopic sensing, and the dense integration of 850-nm WDM data communication transmitters where individual channel wavelengths are set by varying the HCG parameters. RCWA shows that a 300nm-thick Si 3 N 4 HCG with 800nm period anddoi:10.1117/12.2077090 fatcat:nkntcbbsrndvvl2y4f5bng4iye