Integration of GaAs-based VCSEL array on SiN platform with HCG reflectors for WDM applications

Sulakshna Kumari, Johan S. Gustavsson, Ruijun Wang, Emanuel P. Haglund, Petter Westbergh, Dorian Sanchez, Erik Haglund, Åsa Haglund, Jörgen Bengtsson, Nicolas Le Thomas, Gunther Roelkens, Anders Larsson (+5 others)
2015 High Contrast Metastructures IV  
We present a GaAs-based VCSEL structure, BCB bonded to a Si 3 N 4 waveguide circuit, where one DBR is substituted by a free-standing Si 3 N 4 high-contrast-grating (HCG) reflector realized in the Si 3 N 4 waveguide layer. This design enables solutions for on-chip spectroscopic sensing, and the dense integration of 850-nm WDM data communication transmitters where individual channel wavelengths are set by varying the HCG parameters. RCWA shows that a 300nm-thick Si 3 N 4 HCG with 800nm period and
more » ... th 800nm period and 40% duty cycle reflects strongly (>99%) over a 75nm wavelength range around 850nm. A design with a standing-optical-field minimum at the III-V/airgap interface maximizes the HCG's influence on the VCSEL wavelength, allowing for a 15-nm-wide wavelength setting range with low threshold gain (<1000 cm -1 ).
doi:10.1117/12.2077090 fatcat:nkntcbbsrndvvl2y4f5bng4iye