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Local trap levels in Au/n-GaAs Schottky diodes with embedded InAs quantum dots, generated after a long time of the device operation, have been investigated with low-frequency noise measurements performed in the temperature range of 77-298 K and at the forward current of 30 nA. Whereas the initial devices show a pure 1/f noise behavior, after a long time of operation, recombination noise was observed at frequencies above 100 Hz, in addition to the 1/f noise at lower frequencies. Analysis of thedoi:10.1109/led.2006.872841 fatcat:peknshsatbatbct5kt3okg4nsq