Near-threshold SIDO DC-DC converter with a high -precision ZCD for phase change memory chip

Jie Miao, Houpeng Chen, Yu Lei, Yi Lv, Weili Liu, Zhitang Song
2019 IEICE Electronics Express  
This letter proposes a near-threshold single-inductor doubleoutput (SIDO) DC-DC converter with a high-precision zero current detector (ZCD) circuit which supply voltage to phase change memory (PCRAM) chip in wireless sensor network. It has a specific startup procedure to provide wide input voltage range. And the ZCD circuit is designed according to volt-second balance theory and minimizes the duration of reverse inductor current to about 1 nS. The DC-DC converter is implemented in 110 nm
more » ... d CMOS process and the maximum power efficiency is 89.47% with no cross regulation.
doi:10.1587/elex.16.20190250 fatcat:4mrimzcg5zbn5b43qn42ruyeoq