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Vacancy interaction in crystalline Si wafer is studied by numerical simulation based on the Tight-Binding Molecular Dynamics (TBMD) method. We evaluate an effective interaction between vacancy pair in bulk and in a thin slab as model systems of a Si wafer. In the case of vacancy pair in bulk crystal, results reveal that there is an effective "capture radius" of the vacancies to form a divacancy at around 8Å at 300K and 13Å at 600K. Surface structure involving vacancies in Si slab undergoes adoi:10.14723/tmrsj.37.143 fatcat:d3q3e4mrozelvp33pfsg4fbcqm