Low damage, highly anisotropic dry etching of SiC

J.J. Wang, J. Hong, E.S. Lambers, S.J. Pearton, M. Ostling, C.-M. Zetterling, J.M. Grow, F. Ren, R.J. Shul
1998 Fourth International High Temperature Electronics Conference. HITEC (Cat. No.98EX145)  
A parametric study of the etching characteristics of 6H p+ and n' Sic and thin f i l m SiCo.5No.s in Inductively Coupled Plasma NF3/O2 and NF3/Ar discharges has been performed. The etch rates in both chemistries increase monotonically with N F 3 percentage and rf chuck power. The etch rates go through a maximum with increasing ICP source power, which is explained by a trade-off between the increasing ion flu and the decreasing ion energy. The anisotropy of the etched features is also a function
more » ... is also a function of ion flu, ion energy and atomic fluorine neutral concentration. Indium-tinoxide (ITO) masks display relatively good etch selectivity over Sic (maximum of -70
doi:10.1109/hitec.1998.676752 fatcat:qzc3p5uyafbzhc6zmaz3ngwmyq