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HIGH LINEARITY GaN HEMT POWER AMPLIFIER WITH PRE-LINEARIZATION GATE DIODE

SHOUXUAN XIE, VAMSI PAIDI, STEN HEIKMAN, LIKUN SHEN, ALESSANDRO CHINI, UMESH K. MISHRA, MARK J. W. RODWELL, STEPHEN I. LONG
2005 High Performance Devices - Proceedings of the 2004 IEEE Lester Eastman Conference  

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A high linearity MMIC RF power amplifier is reported in the AlGaN/GaN HEMT technology. In order to obtain high linearity, a pre-linearization gate diode is added at the input to compensate for the nonlinear input capacitance C gs of the GaN HEMT device. Another single-ended Class B power amplifier without the gate diode is also designed for comparison. The circuit with the pre-linearization gate diode demonstrates at least 4dB improvement on 3 rd order intermodulation distortion (IMD3)
more » ... ce over the one without the diode up to its P 1dB output power level in two-tone measurement.
doi:10.1142/9789812702036_0036 fatcat:yljahyqcbjbv5amhpli26ok4z4
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SHOUXUAN XIE, VAMSI PAIDI, STEN HEIKMAN, LIKUN SHEN, ALESSANDRO CHINI, UMESH K. MISHRA, MARK J. W. RODWELL, STEPHEN I. LONG. "HIGH LINEARITY GaN HEMT POWER AMPLIFIER WITH PRE-LINEARIZATION GATE DIODE." High Performance Devices - Proceedings of the 2004 IEEE Lester Eastman Conference (2005)