A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2008; you can also visit the original URL.
The file type is
High Performance Devices - Proceedings of the 2004 IEEE Lester Eastman Conference
A high linearity MMIC RF power amplifier is reported in the AlGaN/GaN HEMT technology. In order to obtain high linearity, a pre-linearization gate diode is added at the input to compensate for the nonlinear input capacitance C gs of the GaN HEMT device. Another single-ended Class B power amplifier without the gate diode is also designed for comparison. The circuit with the pre-linearization gate diode demonstrates at least 4dB improvement on 3 rd order intermodulation distortion (IMD3)doi:10.1142/9789812702036_0036 fatcat:yljahyqcbjbv5amhpli26ok4z4