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Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets
Applied Physics Letters
We report on the spontaneous formation of lateral composition modulations (LCMs) in Ga(As,Bi) epilayers grown by low-temperature (<300 C) molecular beam epitaxy (MBE) on GaAs(001). Both cross-section and plan-view transmission electron microscopy techniques are used to investigate the nature of the LCMs, consisting of Bi-rich cylinder-like nanostructures lying along the  growth direction. The observed LCMs are the consequence of a two-dimensional phase separation process occurring at thedoi:10.1063/1.4818270 fatcat:txm4snbqezh3nbxjuuy6qba3t4