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Handbook of Photomask Manufacturing Technology
In extreme ultraviolet lithography (EUVL), the technology specific requirements on the mask are a direct consequence of the utilization of radiation in the spectral region between 10 and 15 nm. At these wavelengths, all condensed materials are highly absorbing and efficient radiation transport mandates the use of all-reflective optical systems. Reflectivity is achieved with resonant, wavelength-matched multilayer (ML) coatings on all of the optical surfaces -including the mask. The EUV mask hasdoi:10.1201/9781420028782.ch11 fatcat:tlc2ji5ocbc5fe2erywlztkzl4