A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2017; you can also visit the original URL.
The file type is application/pdf
.
Properties of BaBi2Ta2O9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications
1999
Journal of Materials Research
We report on the properties of BaBi 2 Ta 2 O 9 (BBT) thin films for dynamic random-access memory (DRAM) and integrated capacitor applications. Crystalline BBT thin films were successfully fabricated by the chemical solution deposition technique on Pt-coated Si substrates at a low annealing temperature of 650 ± C. The films were characterized in terms of structural, dielectric, and insulating properties. The electrical measurements were conducted on Pt͞BBT͞Pt capacitors. The typical measured
doi:10.1557/jmr.1999.0250
fatcat:gepwr6yh5vfcbekol533xwmzdq