Properties of BaBi2Ta2O9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications

C. R. Foschini, P. C. Joshi, J. A. Varela, S. B. Desu
1999 Journal of Materials Research  
We report on the properties of BaBi 2 Ta 2 O 9 (BBT) thin films for dynamic random-access memory (DRAM) and integrated capacitor applications. Crystalline BBT thin films were successfully fabricated by the chemical solution deposition technique on Pt-coated Si substrates at a low annealing temperature of 650 ± C. The films were characterized in terms of structural, dielectric, and insulating properties. The electrical measurements were conducted on Pt͞BBT͞Pt capacitors. The typical measured
more » ... l signal dielectric constant and dissipation factor, at 100 kHz, were 282 and 0.023, respectively, for films annealed at 700 ± C for 60 min. The leakage current density of the films was lower than 10 29 A͞cm 2 at an applied electric field of 300 kV͞cm. A large storage density of 38.4 fC͞mm 2 was obtained at an applied electric field of 200 kV͞cm. The high dielectric constant, low dielectric loss and low leakage current density suggest the suitability of BBT thin films as dielectric layer for DRAM and integrated capacitor applications.
doi:10.1557/jmr.1999.0250 fatcat:gepwr6yh5vfcbekol533xwmzdq