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A Study on Surface Formation Mechanism by Molecular Beam Epitaxy. (1st Report). An Effect of Energy and Density of Adsorbed Molecules upon Si-Si Homo-Epitaxial Growth Mechanism
分子線エピタキシによる面創成に関する研究 (第1報) 付着分子エネルギーおよび付着分子密度がSi‐Siホモエピタキシャル成長機構に及ぼす影響

Arata KANEKO, Yuji FURUKAWA
2000 Journal of the Japan Society for Precision Engineering  

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doi:10.2493/jjspe.66.735 fatcat:f6oy2uleyngijkzd62vjmyc2zu
lang:ja
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Arata KANEKO, Yuji FURUKAWA. "A Study on Surface Formation Mechanism by Molecular Beam Epitaxy. (1st Report). An Effect of Energy and Density of Adsorbed Molecules upon Si-Si Homo-Epitaxial Growth Mechanism." Journal of the Japan Society for Precision Engineering 66.5 (2000) 735-741