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The continuous downscaling of CMOS technologies over the last few decades resulted in higher Integrated Circuit (IC) density and performance. The emergence of FinFET technology has brought with it the same reliability issues as standard CMOS with the addition of a new prominent degradation mechanism. The same mechanisms still exist as for previous CMOS devices, including Bias Temperature Instability ( BTI), Hot Carrier Degradation (HCD), Electro-migration (EM), and Body Effects. A new anddoi:10.2298/fuee1803343s fatcat:rjyajmi2dzfc5ciw5mpaqqp4vm