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2007 Conference on Lasers and Electro-Optics (CLEO)
Impurity centers induced by dopants in InAs/GaAs quantum-dot systems affect energy level occupation and carrier transport in multi-layer QDIPs. In order to better understand doping effects and to optimize device performance, capacitance-voltage spectra are investigated. OSIC codes: (040.3060) Infrared; (160.1890) Detector Materials; (040.5160) Photodetectors; (040.5570) Quantum detectors Multi-layer, self-assembled quantum dots (QDs) formed by the Stranski-Krastanow growth method are used asdoi:10.1109/cleo.2007.4453433 fatcat:sqdb7dzqq5hczizx4odhmfc2im