Development of new gas sensors based on oxidized galinstan

Mahnaz Shafiei, Nunzio Motta, Faegheh Hoshyargar, Anthony P. O'Mullanc
2015 2015 IEEE SENSORS  
For the first time, we have fabricated and tested conductometric sensors based on oxidized liquid galinstan towards NO2 and NH3 gases at low operating temperatures. Galinstan based films on silicon substrates have been studied with two different loadings. Surface morphology of the films was investigated by means of field emission scanning electron microscopy (FESEM). The sensor with higher galinstan loading showed a better sensitivity, which can be attributed to a higher surface area, as
more » ... ace area, as confirmed by SEM. At 100°C, a detection limit as low as 1 and 20 ppm was measured for NO 2 and NH 3 , respectively.
doi:10.1109/icsens.2015.7370331 fatcat:qgo7ovgerrdjnleeseu34h6keu