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Photoelectrochemistry and Etching of SiC: a Comparison with Si
2007
ECS Transactions
unpublished
Preserved Fulltext
The anodic electrochemistry and etching of the group IV compound semiconductor SiC was studied in both KOH and acidic fluoride solutions. The results for p-type and ntype electrodes are compared with those obtained for the group IV elemental semiconductor Si. We point out a number of interesting applications of this work for SiC device technology.
doi:10.1149/1.2731220
fatcat:nfal36kbdbbulhlooif4mwdnze