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Research on the total dose effect and annealing characteristics of Silicon carbide field effect transistor devices under different stresses
2021
Wuli xuebao
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不同应力下碳化硅场效应晶体管器件 总剂量效应及退火特性 2) (西北核技术研究所, 西安 710024) 3) (工业和信息化部第五研究所, 电子元器件可靠性物理及其应用技术国家重点实验室, 广州 510610)
doi:10.7498/aps.70.20210515
fatcat:zbac764cenf3bef56qdwgxl6si