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Optimization of indium tin oxide layer thickness for surface-plasmon-enhanced green light-emitting diodes
Japanese Journal of Applied Physics
Surface-plasmon (SP)-enhanced light-emitting diodes (LEDs) covering self-assembled Ag nanoparticles (NPs) on top of a p-GaN layer are broadly studied to improve luminescence efficiency in green LEDs. However, the enhancement factor of SP-enhanced LEDs is reduced under electrical injection compared to that under external optical pumping. For current injection, indium tin oxide (ITO) is typically deposited on top of a p-GaN layer for current spreading and ohmic contact. In this paper, wedoi:10.7567/1347-4065/ab0405 fatcat:jcy3weliqncdrcwyl4sw7tlqqq