Single-walled carbon nanotube growth at low temperature by alcohol gas source method using Co catalyst: enhancement effects of Al2O3 buffer layer on carbon nanotube yield

Takuya Okada, Takahiro Saida, Shigeya Naritsuka, Katsutoshi Fukuda, Takahiro Maruyama
2019 Transactions of the Materials Research Society of Japan  
Using an alcohol gas source chemical vapor deposition method, we attempted to grow single-walled carbon nanotube (SWCNT) growth using Co catalysts on Al 2 O 3 buffer layers. Reducing the growth temperature decreased the optimal ethanol pressure to obtain the highest SWCNT yield. By optimizing the ethanol pressure, we succeeded in growing SWCNTs at 400ºC. Irrespective of the growth temperature, SWCNT yields from Co catalysts on Al 2 O 3 buffer layers were higher than those on SiO 2 /Si
more » ... SiO 2 /Si substrates, but the enhancing effects of Al 2 O 3 buffer layers on SWCNT yield were reduced below 500ºC. Taking into account both in-plane X-ray diffraction results and decrease of catalyst aggregation in the low temperature region, we concluded that the density of Co particles suitable for SWCNT growth increased on SiO 2 surface at low temperature, resulting in the reduction of difference in SWCNT yield at low temperature between Al 2 O 3 buffer layers and SiO 2 /Si substrates. Single-walled carbon nanotube growth at low temperature by alcohol gas source method using Co catalyst: enhancement effects of Al 2 O 3 buffer layer on carbon nanotube yield
doi:10.14723/tmrsj.44.65 fatcat:76ut4j4mbnfx5p32slbmhibbpy