The InGaN-based green resonant-cavity light-emitting diodes ͑RCLEDs͒ have been fabricated using hydrogen ion-implantation and laser liftoff techniques. The RCLEDs structure consisted of an InGaN/GaN multiple-quantum-well active layer between the top ͑5 pairs͒ and bottom ͑7.5 pairs͒ dielectric TiO 2 /SiO 2 distributed Bragg reflectors with optical reflectance of 85% and 99.9%, respectively. The insulation layers of the RCLEDs with and without H + implantation were formed by the hydrogen

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... tation layers of 1 ϫ 10 14 ions/cm 2 concentration and SiO 2 film, respectively. The corresponding forward turn-on voltage at 0.6 kA/cm 2 dc current density injection were about ϳ4.58 V and ϳ4.55 V for the RCLEDs with and without H + implantation. The light output intensity of the RCLEDs with H + implantation is higher by a factor of 1.4 as compared to that of the similar structure without H + implantation at a current density of 0.6 kA/cm 2 . The directionality of RCLEDs with H + implantation is superior to that of RCLEDs without H + implantation.