A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2020; you can also visit the original URL.
The file type is application/pdf.
Competition between damage buildup and dynamic annealing in ion implantation into Ge
2006
Applied Physics Letters
Preserved Fulltext
Channeling implantation of Ga into Ge is performed at two very different ion fluxes ͑10 12 and 10 19 cm −2 s −1 ͒, at two temperatures ͑room temperature and 250°C͒, and at five different fluences. The fluence dependence of the range profiles and of the implantation damage is strongly influenced by defect accumulation and dynamic annealing. At 250°C, the maximum lifetime of the defects is less than 10 s. On the other hand, at room temperature no significant annealing is found within the first 10
doi:10.1063/1.2360238
fatcat:s3z35ketufg6tkwhqourdgeppy