Influence of Laser-Pulse Energy on Field Evaporation of LaAlO 3 in Atom Probe Tomography Analysis

Young-Tae Kim, Jae-Bok Seol, Chang-Min Kwak, Chan-Gyung Park
2016 Microscopy and Microanalysis  
As followed by the design concept of metal-oxide-semiconductor (MOS) devices, the development of dielectric materials with high-k property becomes a crucial for reducing the equivalent oxide thickness. In order to develop the novel dielectric materials, understanding of correlations between electrical properties and chemical nature at metal-oxide interfaces has been an essential topic [1]. To identify this subject, atomic-scale investigation of bulk oxide materials through laser-pulsed atom
more » ... e tomography (APT) has been widely performed [2] [3] [4] [5] [6] [7] . From the fundamental point of view, we present the influence of laser-pulse energy on APT results of lanthanum aluminum oxide (LaAlO3), termed LAO, especially mass-resolving power (MRP). The LAO is one of the potential candidates for substituting the conventional SiO2, which exhibit many advantages such as a high dielectric constant and large band-gap energy with ranging between 5.8 and 6.6 eV. Analysis were performed using a LAWATAP microscope in laser-pulsing mode of pulse energy varying with systematically 0.03~0.21 μJ at ~100 kHz pulse repetition rate, 0.002 atom/pulse detection rate, and 30 K.
doi:10.1017/s1431927616008862 fatcat:rzy27sdzofe67ch2ra5z3qeehe