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Nonlinear on-chip capacitor characterization
2007
2007 18th European Conference on Circuit Theory and Design
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The paper deals with a modification of the CBCM method for nonlinear on-chip capacitance characterization. The proposed modification uses two DC swept sources to measure the whole nonlinear Q-v characteristic in both polarities without the necessity to switch the object being measured. A test-chip implementing the method was designed and manufactured in the 0.35μm CMOS process. It was used for MOSCAP characterization in the full operating voltage range.
doi:10.1109/ecctd.2007.4529576
dblp:conf/ecctd/SutoryKBB07
fatcat:kfpr4fzkivhnjl6xwxwdykjhqm