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A Study of Epitaxial Growth of Compound Semiconductors from the Viewpoint of Atomic Dynamics using DFT Calculation
原子動力学の第一原理計算から考える化合物半導体のエピタキシャル成長
2008
Hyomen Kagaku
原子動力学の第一原理計算から考える化合物半導体のエピタキシャル成長
Preserved Fulltext
Determination of mechanism of anisotropic growth, dot formation, crystal orientation determination and polarity determination for epitaxial growth are introduced as examples of application of the density functional calculation and the kinetic Monte Carlo simulation. The anisotropic atomic migration for non-polar surface of GaN and ZnO forms stripestructure during epitaxial growth. The adsorption site and adsorption energy of adatom determine polarity and orientation of compound semiconductor in epitaxial growth.
doi:10.1380/jsssj.29.765
fatcat:zd7biuselvfnbj6j642ioejm4y