A stochastic model for crystal‐amorphous transition in low temperature molecular beam epitaxial Si (111)

R. Venkatasubramanian, S. Gorantla, S. Muthuvenkatraman, D. L. Dorsey
1996 Journal of Applied Physics  
Molecular beam epitaxial Si ͑111͒ grown below a certain temperature result in amorphous structure due to the limited surface mobility of atoms in finding correct epitaxial sites. In spite of many experimental and theoretical studies, the mechanism of crystal-amorphous transition and its dynamics related to the growth conditions are not well understood. In this article, we present a theoretical model based on the formation of stacking fault like defects as a precursor to the amorphous transition
more » ... of the layer. The model is simulated based on a stochastic model approach and the results are compared to that of experiments for temperatures in the range of 500-900 K and growth rate in the range of 0.1-3.0 Å/s. The agreement between our results and experimental observations is excellent.
doi:10.1063/1.363698 fatcat:odssykuurfc6bjjo6u6mqrfsi4