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Molecular Dynamics Modeling of Octadecaborane Implantation into Si
[chapter]
Simulation of Semiconductor Processes and Devices 2007
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We have carried out molecular dynamics simulations of monatomic B and octadecaborane cluster implantations into Si in order to make a comparative study and determine the advantages and drawbacks of each approach when used to fabricate shallow junctions. We have obtained and analyzed the doping profiles and the amount and morphology of the damage produced within the target. Our simulation results indicate that the use of octadecaborane clusters for the implantation process shows several
doi:10.1007/978-3-211-72861-1_4
fatcat:ufdhcm5cendprj6gudrkyitvgu