Ulloa, J.M.; Koenraad, P.M.; Bonnet-Eymard, M.; Létoublon, A.; Bertru, N. The influence of a lattice-matched GaAsSb capping layer on the structural properties of self-assembled InAs quantum dots ͑QDs͒ grown on InP substrates is studied on the atomic scale by cross-sectional scanning tunneling microscopy. While lattice-matched In 0.53 Ga 0.47 As-capped QDs are clearly truncated pyramids, GaAs 0.51 Sb 0.49 -capped QDs grown under the same conditions look like full pyramids and exhibit a larger

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... ght, indicating that capping with GaAsSb reduces dot decomposition. Since there are no differences in strain between the two capping layers, this behavior is most likely related to the surfactant effect of Sb, which stabilizes the growth front and avoids adatom migration.