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Ulloa, J.M.; Koenraad, P.M.; Bonnet-Eymard, M.; Létoublon, A.; Bertru, N. The influence of a lattice-matched GaAsSb capping layer on the structural properties of self-assembled InAs quantum dots ͑QDs͒ grown on InP substrates is studied on the atomic scale by cross-sectional scanning tunneling microscopy. While lattice-matched In 0.53 Ga 0.47 As-capped QDs are clearly truncated pyramids, GaAs 0.51 Sb 0.49 -capped QDs grown under the same conditions look like full pyramids and exhibit a largerdoi:10.1063/1.3361036 fatcat:zfpoluqr6ngtfllc2dw4uomgjq