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Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.
The effect of 40 keV electron irradiation on a-Si:H p-i-n single-junction solar cells was investigated using measured and simulated dark J-V characteristics. EPRI-AMPS and PC-ID simulators were explored for use in the studies. The EPRI-AMPS simulator was employed and simulator parameters selected to produce agreement with measured J-V characteristics. Three current mechanisms were evident in the measured dark J-V characteristics after electron irradiation, namely, injection, shunting and a termdoi:10.1109/pvsc.2002.1190770 fatcat:uh76ykd6nzeeli5um2ps25o3ge