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ICCAD-2003. International Conference on Computer Aided Design (IEEE Cat. No.03CH37486)
Progress in semiconductor process technology has made SOI transistors one of the most promising candidates for high performance and low power designs. With smaller diffusion capacitances, SOI transistors switch significantly faster than their traditional bulk MOS counterparts and consume less power per switching. However, design and simulation of SOI MOS circuits is more challenging due to more complex behavior of an SOI transistor involving floating body effects, delay dependence on history ofdoi:10.1109/iccad.2003.159680 fatcat:evacyrn76je5lplyq456dxfeoe