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Multi-wafer 3C–SiC heteroepitaxial growth on Si(100) substrates
2010
Chinese Physics B
Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands. Here we report on results of the heteroepitaxial growth of multiwafer 3C-SiC films on Si(100) substrates by employing a home-made horizontal hot wall low pressure chemical vapour deposition (HWLPCVD) system which was designed to be have a high-throughput, multi-wafer (3×2-inch) capacity. 3C-SiC film properties of the intra-wafer
doi:10.1088/1674-1056/19/8/088101
fatcat:2o2mtxymjfgrbe3mfqvdk6w3tm