Multi-wafer 3C–SiC heteroepitaxial growth on Si(100) substrates

Sun Guo-Sheng, Liu Xing-Fang, Wang Lei, Zhao Wan-Shun, Yang Ting, Wu Hai-Lei, Yan Guo-Guo, Zhao Yong-Mei, Ning Jin, Zeng Yi-Ping, Li Jin-Min
2010 Chinese Physics B  
Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands. Here we report on results of the heteroepitaxial growth of multiwafer 3C-SiC films on Si(100) substrates by employing a home-made horizontal hot wall low pressure chemical vapour deposition (HWLPCVD) system which was designed to be have a high-throughput, multi-wafer (3×2-inch) capacity. 3C-SiC film properties of the intra-wafer
more » ... d the wafer-to-wafer including crystalline morphologies, structures and electronics are characterized systematically. The undoped and the moderate NH 3 doped n-type 3C-SiC films with specular surface are grown in the HWLPCVD, thereafter uniformities of intra-wafer thickness and sheet resistance of the 3C-SiC films are obtained to be 6%∼7% and 6.7%∼8%, respectively, and within a run, the deviations of wafer-towafer thickness and sheet resistance are less than 1% and 0.8%, respectively.
doi:10.1088/1674-1056/19/8/088101 fatcat:2o2mtxymjfgrbe3mfqvdk6w3tm