Simulation of Analog/RF Performance and Process Variation in Nanowire Transistors [chapter]

Runsheng Wang, Jing Zhuge, Ru Huang
Simulation of Semiconductor Processes and Devices 2007  
In this work, the RF performance of Si nanowire transistors (SNWTs) is computationally investigated, including RF figures of merit, impacts of parasitic effects and nanowire cross-sectional shape fluctuation caused by process variation. The simulated results show superior RF scalability of SNWTs and severe impacts of parasitic capacitance and process fluctuations. The influence of gradient doping profile in source/drain extension region of SNWTs on RF application is also studied.
doi:10.1007/978-3-211-72861-1_92 fatcat:mpsdseuw7zexhf74iggbmoghd4