Tin Oxide Films Deposited by Ozone-Assisted Thermal Chemical Vapor Deposition

Jeong-Woon Bae, Sang-Woon Lee, Kook-Hyun Song, Jung-Il Park, Kwang-Ja Park, Young-Wook Ko, Geun-Young Yeom
1999 Japanese Journal of Applied Physics  
Transparent conductive tin oxide (TO, SnO 2 ) films have been prepared by low pressure metal organic chemical vapor deposition (LP-MOCVD) from various mixtures of tetramethyltin (TMT) with oxygen and oxygen containing 2.96 to 5.1 mol% O 3 . The properties of TO films have been changed with the gas flow rate (oxygen, oxygen containing ozone) and the substrate temperature. The use of oxygen containing ozone instead of pure oxygen reduced substrate temperature significantly and the resistivity
more » ... e maintaining the same growth rate. The films prepared using ozone showed resistivity ranging from 10 −2 to 10 −3 cm, and ranging mobility from 10.5 to 13.7 cm 2 /Vs.
doi:10.1143/jjap.38.2917 fatcat:n42td6krpvefpjkktmwaknukaa