Optical spectroscopy of cubic GaN in nanowires

J. Renard, G. Tourbot, D. Sam-Giao, C. Bougerol, B. Daudin, B. Gayral
2010 Applied Physics Letters  
We show that highly homogeneous cubic GaN can be grown by plasma-assisted molecular beam epitaxy on wurtzite GaN nanowires. The line width of the donor bound exciton is below 3 meV and can reach 1.6 meV in the best parts of the studied sample. This allows to perform a detailed spectroscopy of cubic GaN, and, in particular, to determine the precise spectral positions of the donor bound exciton, the fundamental free exciton and the split-off exciton in a photoluminescence experiment.
doi:10.1063/1.3478004 fatcat:2ivl77t365e5rmioubq7rujaci