Optical and Electrical Properties of (SnO2)X(In2O3)1-X thin Films Prepared by Pulse Laser Deposition Technique

Kadhem A. Aadim, Abdulmajeed E. Ibrahim, Qutaibah A. Abduljabbar
2017 International Journal of Physics  
In this work, fundamental wavelength (1064 nm) Q-switched Nd:YAG laser with 800 mJ peak energy on SnO 2 :In 2 O 3 target to produce ITO thin films. Thin films characterized by UV-visible absorbance, DC conductivity, Hall effect measurements and X-ray diffraction. It was found that the transmission increase with increasing In 2 O 3 ratio from 0 to 0.5 reaching about 88% in visible range. It can be seen that the conductivity increase with increasing ratio from 0 to 0.3 then decrease at 0.5 ratio.
more » ... It can be found from Hall effect measurement that the mobility μ H increase at 0.1 ratio then decrease with more In 2 O 3 content.
doi:10.12691/ijp-5-4-3 fatcat:nmb7wavhy5c63mnyvpymldcilu