THE EFFECTS OF INTRINSIC SILICON EPITAXIAL LAYER IN P-I-N DIODE FOR HIGH POWER DEVICES

Cheh Mee, M Md Arshad, M Fathil, U Hashim
2015 unpublished
The p-in diode is one of the earliest semiconductor devices developed for power circuit application. The diode is formed with the intrinsically doped i.e. i-layer sandwiched between the p-type and n-type layers. In this paper, we focus on the variables in the intrinsic region of silicon p-in diode to the current-voltage characteristics. In our structure, n-type refers to the bulk substrate and intrinsic region refers to the epitaxial layer of the silicon substrate. Result shows that intrinsic
more » ... ws that intrinsic layer optimization has successfully enhanced the diode device robustness in terms of diode current-voltage characteristics, which reflects better manufacturing yield and improve the final product performance.
fatcat:nhjufb36srcabjt7b2ihngsq3i