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The p-in diode is one of the earliest semiconductor devices developed for power circuit application. The diode is formed with the intrinsically doped i.e. i-layer sandwiched between the p-type and n-type layers. In this paper, we focus on the variables in the intrinsic region of silicon p-in diode to the current-voltage characteristics. In our structure, n-type refers to the bulk substrate and intrinsic region refers to the epitaxial layer of the silicon substrate. Result shows that intrinsicfatcat:nhjufb36srcabjt7b2ihngsq3i