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Methods of increasing the input power level in multi-element film microwave attenuators
Методы увеличения уровня входной мощности в многоэлементных пленочных СВЧ аттенюаторах
2021
Proceedings of the Russian higher school Academy of sciences
Методы увеличения уровня входной мощности в многоэлементных пленочных СВЧ аттенюаторах
Preserved Fulltext
The paper describes the design principles of multi-element broadband microwave attenuators of a high power level on film resistors. The proposed approaches make it possible to increase the input power level by several times or, at a constant input power, to significantly expand the ope¬rating frequency band. The studied attenuators with an insertion loss of 1-10 dB provide high-quality matching in the 0-2 GHz frequency band at an input power level of up to 500 W. These parameters are obtained
doi:10.17212/1727-2769-2021-3-32-43
fatcat:ndiijsg4djdczeqfsi7ox47r7e