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In this study, using inductively coupled Cl 2 /Ar plasmas (ICP), the effects of various process conditions such as source power, bias power, Cl 2 /Ar gas ratio, and ultraviolet (UV) ray were investigated to obtain high Cu etch rates without remaining any nonvolatile etch products. Due to the formation of nonvolatile copper chloride, copper film was not etched and, instead, a thick copper chloride residue was formed on the copper surface when Cl 2 /Ar ICP plasma was used. However, the residuedoi:10.1143/jjap.43.8300 fatcat:3wzg6cjxorh2hklrdwo6rpwdta