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Ultrafast Phenomena in Semiconductors and Nanostructure Materials X
We have experimentally measured the terahertz radiation from a series of ion-implanted semiconductors, both from the bare semiconductor surface and from photoconductive switches fabricated on them. GaAs was implanted with As + ions, and InGaAs and InP with Fe + ions, and all samples were annealed post implantation. An increase in emission power is observed at high frequencies, which we attribute to the ultrafast trapping of carriers. We use a three-dimensional carrier dynamics simulation todoi:10.1117/12.644074 fatcat:xggpo6pmgfhaxj7ysct5if3vlq