Carrier dynamics in ion-implanted semiconductors studied by simulation and observation of terahertz emission

J. Lloyd-Hughes, E. Castro-Camus, M. D. Fraser, H. H. Tan, C. Jagadish, M. B. Johnston, Kong-Thon Tsen, Jin-Joo Song, Hongxing Jiang
2006 Ultrafast Phenomena in Semiconductors and Nanostructure Materials X  
We have experimentally measured the terahertz radiation from a series of ion-implanted semiconductors, both from the bare semiconductor surface and from photoconductive switches fabricated on them. GaAs was implanted with As + ions, and InGaAs and InP with Fe + ions, and all samples were annealed post implantation. An increase in emission power is observed at high frequencies, which we attribute to the ultrafast trapping of carriers. We use a three-dimensional carrier dynamics simulation to
more » ... s simulation to model the emission process. The simulation accurately predicts the experimentally observed bandwidth increase, without resorting to any fitting parameters. Additionally, we discuss intervalley scattering, the influence of space-charge fields, and the relative performance of InP, GaAs and InAs based photoconductive emitters.
doi:10.1117/12.644074 fatcat:xggpo6pmgfhaxj7ysct5if3vlq