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An amorphous silicon photodiode array for glass-based optical MEMS application
2009
2009 IEEE Sensors
A highly sensitive photo-detector array deposited on a glass substrate with an optional integrated optical filter have been presented. The active element is a vertically integrated hydrogenated amorphous silicon photodiode featuring a dark current of less than 1e-10 A/cm 2 for -3V polarization and a maximal quantum efficiency of 80% near 580 nm. The prototype was encapsulated and successfully tested optically. It has a fill factor of only 44% which, however, can be easily increased to 90% using
doi:10.1109/icsens.2009.5398496
fatcat:blo37xncirfoxgmdjlyvq2yy3e