Hybrid molecular solid state memories & electronic nanodevices based on Polyoxometalates & other molecules of reversible redox activity [article]

Angeliki Maria Balliou, National Technological University Of Athens, National Technological University Of Athens
ACCORDING to ITRS 2.0 2015, memory technologies will continue to drive pitch scaling and highest transistor count. As DRAM products are expected to reach their scaling limits by 2024, and unless some major breakthrough occurs, flash memory is expected to lead the semiconductor industry towards the next revolution in transistor density. Inspired from this fact, this work focuses on molecular flash memories and logic switching molecular networks which, among all emerging technology candidates,
more » ... considered particularly promising due to their ability for reduction of size per cell and solution processing (low cost, injection-printing friendly), conceptual compatibility with photonic addressing due to molecular photosensitivity, multilevel storage, high information density, quick write-read operations, low power consumption, mechanical flexibility, bottom-up fabrication logic (overcoming the lithographic patterning constrains), conceptual non-binary data representation and properties' tunability through chemical tailoring. Molecular electronic devices are fabricated via a combination of bottomup layer-by-layer nanofabrication and self-assembly with CMOS platform lithography in order to provide a low cost large-scale route towards extension of the functional value of Si-based platforms. Tungsten Polyoxometalates (POM, [PW 12 O 40 ] 3− ) of the Keggin class are being self-arranged both on nanocrystal and hyperstructure level in a rational way resulting in layers of tunable spatial correlation length. The hyperstructures exhibit tunable valence and conduction bands and, hence, adjustable electronic properties directly related to the extent of crystallization of their building blocks. Dimensional crossover-driven insulator-to-semimetal transitions can be enforced in these hyperstructures via tuning the extent of crystallization in solution. Being able to transport or confine charge at will, these hyperstructures constitute ideal candidates for alternative molecule-based solution-printed circuitry components and transistor channels. Hybrid CMOS/molecular memory devices based on the parallel plate architecture are fabricated, characterized and tested. Each memory element contains a planar hyperstructure of molecules (typically several
doi:10.26240/heal.ntua.2439 fatcat:htav4paq25fvdjoe2acsrwhbea