Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask

Chang Goo Kang, Jang Won Kang, Sang Kyung Lee, Seung Yong Lee, Chun Hum Cho, Hyeon Jun Hwang, Young Gon Lee, Jinseong Heo, Hyun-Jong Chung, Heejun Yang, Sunae Seo, Seong-Ju Park (+3 others)
2011 Nanotechnology  
A graphene nanoribbon (GNR) is an important basic structure to open a bandgap in graphene. The GNR processes reported in the literature are complex, time-consuming, and expensive; moreover, the device yield is relatively low. In this paper, a simple new process to fabricate a long and straight graphene nanoribbon with a high yield has been proposed. This process utilizes CVD graphene substrate and a ZnO nanowire as the hardmask for patterning. 8 µm long and 50-100 nm wide GNRs were successfully
more » ... demonstrated in high density without any trimming, and ∼10% device yield was realized with a top-down patterning process. After passivating the surfaces of the GNRs using a low temperature atomic layer deposition (ALD) of Al 2 O 3 , high performance GNR MOSFETs with symmetric drain-current-gate-voltage (I d -V g ) curves were demonstrated and a field effect mobility up to ∼1200 cm 2 V −1 s −1 was achieved at V d = 10 mV.
doi:10.1088/0957-4484/22/29/295201 pmid:21673381 fatcat:5tadyt3durcszcafufympsb36u