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Results on the growth of GaAs on (001) GaAs substrates by the epitaxial lateral overgrowth technique are reported. We show that the ratio of normal to lateral growth rates in the epitaxial lateral overgrowth process can be controlled by the crystallographic orlentation of the seeds and by Si adding to the melt. Experimental data showing that the dislocations threading from the substrate are efficiently filtered and cannot propagate to the epitaxial lateral overgrowth layers are presented. Thesedoi:10.12693/aphyspola.92.1079 fatcat:3ctyuxpdive7noksvyiwjd6nru